- field-oxide region
- Электроника: защитный оксидный участок
Универсальный англо-русский словарь. Академик.ру. 2011.
Универсальный англо-русский словарь. Академик.ру. 2011.
field-oxide region — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f … Radioelektronikos terminų žodynas
protective oxide region — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f … Radioelektronikos terminų žodynas
région d'oxyde protectrice — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f … Radioelektronikos terminų žodynas
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Field electron emission — It is requested that a diagram or diagrams be included in this article to improve its quality. For more information, refer to discussion on this page and/or the listing at Wikipedia:Requested images. Field emission (FE) (also known as field… … Wikipedia
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Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… … Wikipedia
Nitric oxide synthase — Identifiers EC number 1.14.13.39 CAS number 125978 95 2 … Wikipedia
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Complementary metal oxide semiconductor — Un inversor en tecnología CMOS. Complementary metal oxide semiconductor o CMOS es una de las familias lógicas empleadas en la fabricación de circuitos integrados. Su principal característica consiste en la utilización conjunta de transistores de… … Wikipedia Español
Feldoxidbereich — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f … Radioelektronikos terminų žodynas