field-oxide region

field-oxide region
Электроника: защитный оксидный участок

Универсальный англо-русский словарь. . 2011.

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  • field-oxide region — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas

  • protective oxide region — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas

  • région d'oxyde protectrice — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas

  • Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

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  • Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… …   Wikipedia

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  • Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… …   Wikipedia

  • Complementary metal oxide semiconductor — Un inversor en tecnología CMOS. Complementary metal oxide semiconductor o CMOS es una de las familias lógicas empleadas en la fabricación de circuitos integrados. Su principal característica consiste en la utilización conjunta de transistores de… …   Wikipedia Español

  • Feldoxidbereich — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas


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